SEMICONDUCTOR INTEGRATED CIRCUIT AND MANUFACTURE THEREOF

PROBLEM TO BE SOLVED: To realize electrostatic breakdown preventive means, without requiring the area for protective elements by providing a protective insulation film over gate electrodes and protective conductive film connected to the ground potential in constitution of a semiconductor integrated circuit. SOLUTION: On the over layer of gate electrodes 4 a protective insulation film 7 is formed which is made thin to lower the electric resistance more than a lower gate oxide film 3. A protective conductive film 8 connected to the ground potential is formed. Even if a high voltage is applied to an input terminal IN connected to the gate electrode 4 due to the electrostatic charges, it is guided to the protective film having the lower electric resistance than that of the gate oxide film 3 and discharged through the conductive film 8. The protective insulation and conductive films 7, 8 are formed so as to cover the gate electrodes 4, thereby discharging from the corners of the gate electrodes 4 to which the electric field is concentrated. Thus the electrostatic breakdown can be surely avoided.