WORKING OF SEMICONDUCTOR WAFER

PROBLEM TO BE SOLVED: To prevent contamination of an epitaxial wafer and to improve its life time value top the level of a mirror wafer. SOLUTION: A method for work a semiconductor wafer comprises a step S1 of depositing a silicon film 9 on a susceptor 6 for taking contaminants D into the silicon fi...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	KONDO TAIICHI, MOCHIZUKI HARUMI, KATAOKA MASATSUGU, ARAKAWA HISASHI
Format:	Patent
Sprache:	eng
Schlagworte:	AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE APPARATUS THEREFOR BASIC ELECTRIC ELEMENTS CHEMISTRY CRYSTAL GROWTH ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY METALLURGY PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE REFINING BY ZONE-MELTING OF MATERIAL SEMICONDUCTOR DEVICES SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE SINGLE-CRYSTAL-GROWTH UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL
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