WORKING OF SEMICONDUCTOR WAFER

WORKING OF SEMICONDUCTOR WAFER

PROBLEM TO BE SOLVED: To prevent contamination of an epitaxial wafer and to improve its life time value top the level of a mirror wafer. SOLUTION: A method for work a semiconductor wafer comprises a step S1 of depositing a silicon film 9 on a susceptor 6 for taking contaminants D into the silicon fi...

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Bibliographische Detailangaben
Hauptverfasser: KONDO TAIICHI, MOCHIZUKI HARUMI, KATAOKA MASATSUGU, ARAKAWA HISASHI
Format: Patent
Sprache:eng
Schlagworte:
AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE
APPARATUS THEREFOR
BASIC ELECTRIC ELEMENTS
CHEMISTRY
CRYSTAL GROWTH
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
METALLURGY
PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE
REFINING BY ZONE-MELTING OF MATERIAL
SEMICONDUCTOR DEVICES
SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE
SINGLE-CRYSTAL-GROWTH
UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL
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Beschreibung
Zusammenfassung:PROBLEM TO BE SOLVED: To prevent contamination of an epitaxial wafer and to improve its life time value top the level of a mirror wafer. SOLUTION: A method for work a semiconductor wafer comprises a step S1 of depositing a silicon film 9 on a susceptor 6 for taking contaminants D into the silicon film 9, a step S2 of removing the silicon film 9 containing the contaminates D, a step S3 of repeating the above at last once, a step S4 of forming a silicon coating on a supporting surface 6a, and a step S5 of applying an epitaxial growth treatment to the semiconductor wafer 2.