ION IMPLANTING DEVICE

PROBLEM TO BE SOLVED: To provide an ion implanting device allowing the easy change of a bushing and the extension of the replacement period of the bushing. SOLUTION: A bushing 120 laid between a support plate 116 for bearing an ion source 112 and an ion beam generation vessel 124 is formed out of the first bushing 120a to be fixed and the second bushing 120b to be replaced. Also, a projection 120b' is formed on the inner wall of the second bushing 120b, and the prescribed groove is formed on the projection 120b' at the side different from an ion beam takeout direction. As a result, when a reaction product adheres to the inner wall of the second bushing 120b and electrical conductivity takes place, the change of only the second bushing 120b is required, thereby allowing an easy replacement work. Furthermore, the formation of the projection 120b' and the groove extends the replacement period of the second bushing 120b and a throughput is improved.