SEMICONDUCTOR SWITCH DRIVE CIRCUIT

PROBLEM TO BE SOLVED: To realize a high voltage semiconductor switch drive circuit which assures high speed operation with an arbitrary pulse width with an extremely simplified circuit structure. SOLUTION: A high voltage semiconductor switch element 5 for receiving a pulse voltage obtained from a pu...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
1. Verfasser: TSURUMI KEIICHI
Format: Patent
Sprache:eng
Schlagworte:
Online-Zugang:Volltext bestellen
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
Beschreibung
Zusammenfassung:PROBLEM TO BE SOLVED: To realize a high voltage semiconductor switch drive circuit which assures high speed operation with an arbitrary pulse width with an extremely simplified circuit structure. SOLUTION: A high voltage semiconductor switch element 5 for receiving a pulse voltage obtained from a pulse transformer at a gate of a capacitive load via a diode 3 is connected in a high voltage current circuit and a second switch element 4 is also connected to the diode 3 discharge, when the pulse voltage falls, the charges of a gate capacitor charged when the pulse voltage rises.