FABRICATION OF SEMICONDUCTOR LASER

PROBLEM TO BE SOLVED: To suppress abnormal growth of upper current block layer on the opposite sides of a mesa structure without lowering the mesa structure by etching a laminate on the opposite sides thereof to obtain a reverse mesa type upper part of active layer and filling the opposite sides of mesa structure having lower stripe part including the active layer with a current block layer formed by organo-metallic CVD. SOLUTION: A buffer layer 2, an active layer 3, a clad layer 4 and a cap layer 8 are grown sequentially on a substrate 1 having (100) face by organo- metallic vapor growth (MOUPE). Subsequently, an SiO2 selective growth mask 9 is formed and used for forming a mesa structure 11 having a stripe in the direction. Consequently, the mesa structure 11 has the SiO2 selective growth mask 9 at the upper part and the upper cap layer 8 has reverse mesa type side face. Finally, a current block layer 10 is grown by MOVPE to fill the region other than the mesa structure 11 using the SiO2 selective growth mask 9.