SEMICONDUCTOR DEVICE

SEMICONDUCTOR DEVICE

PURPOSE: To give the structure of a fine field effect transistor effective at the time of operating with a low voltage. CONSTITUTION: A layer 5 having low impurity concentration is provided on a carrier transit region, and a high impurity concentration layer 4 is formed thereunder. The layer 4 is so...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Hauptverfasser: IHARA SHIGEO, OKURA YASUYUKI
Format: Patent
Sprache:eng
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:PURPOSE: To give the structure of a fine field effect transistor effective at the time of operating with a low voltage. CONSTITUTION: A layer 5 having low impurity concentration is provided on a carrier transit region, and a high impurity concentration layer 4 is formed thereunder. The layer 4 is so designed as to be completely depleted by a gate. Further, a low impurity concentration layer 3 and a high impurity concentration layer 2 are provided thereunder, and the depleted layer is so designed as to be stopped at the layer 2.