SEMICONDUCTOR DEVICE AND MANUFACTURE THEREOF

SEMICONDUCTOR DEVICE AND MANUFACTURE THEREOF

PROBLEM TO BE SOLVED: To form a barrier metal for the contact hole of high aspect ratio at a relatively low price using a simple method. SOLUTION: After a contact hole 24 is based in the polycrystalline silicon film 17 which was formed in advance, an Ni-containing aqueous solution of nitric acid is...

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Bibliographische Detailangaben
1. Verfasser: TAKIYAMA MASANORI
Format: Patent
Sprache:eng
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Zusammenfassung:PROBLEM TO BE SOLVED: To form a barrier metal for the contact hole of high aspect ratio at a relatively low price using a simple method. SOLUTION: After a contact hole 24 is based in the polycrystalline silicon film 17 which was formed in advance, an Ni-containing aqueous solution of nitric acid is applied thereon. Then, Ni and silicon are reacted with each other, and an Ni silicide layer 26 is formed on the bottom part of the contact hole 24. An aluminum film 28, which is buried in the contact hole 24, is formed on the Ni silicide layer 26.