DRY ETCHING APPARATUS

PURPOSE: To provide a dry etching apparatus enabling the increase of the etching rate and improvement of the in-plane uniformity. CONSTITUTION: A dry etching apparatus comprises a plasma generating chamber 14 for exciting an etching gas to produce active species, etching chamber 2 for etching a work...

Ausführliche Beschreibung

Gespeichert in:

Bibliographische Detailangaben
Hauptverfasser:	FUKUDA JOJI, GONDO TAKANORI
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL DIFFUSION TREATMENT OF METALLIC MATERIAL ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL METALLURGY MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLICMATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASSC23 AND AT LEAST ONEPROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25 NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE SEMICONDUCTOR DEVICES
Online-Zugang:	Volltext bestellen
Tags:	Tag hinzufügen Keine Tags, Fügen Sie den ersten Tag hinzu!

Beschreibung
Zusammenfassung:	PURPOSE: To provide a dry etching apparatus enabling the increase of the etching rate and improvement of the in-plane uniformity. CONSTITUTION: A dry etching apparatus comprises a plasma generating chamber 14 for exciting an etching gas to produce active species, etching chamber 2 for etching a workpiece S and gas transport passages 9, 10 and 20 communicating with the chambers 14 and 2. It has dispersion plates 22 disposed between gas discharge ports 21 of the passages 9, 10 and 20 and workpiece S to disperse an etching gas so that at least the outer peripheral edge of the dispersion plate 22 is exposed in a space of the chamber 2.