MOVING MIRROR BEND MEASURING METHOD

PROBLEM TO BE SOLVED: To easily measure a bend of coordinate measuring moving mirrors fixed to a wafer stage of an exposing device in a short time. SOLUTION: X directional and Y directional coordinates of a wafer stage 13 and yawing are measured by moving mirrors 16X and 16Y fixed on the wafer stage...

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Bibliographische Detailangaben
1. Verfasser:	KAWAKUBO SHOJI
Format:	Patent
Sprache:	eng
Schlagworte:	APPARATUS SPECIALLY ADAPTED THEREFOR BASIC ELECTRIC ELEMENTS CINEMATOGRAPHY ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY ELECTROGRAPHY HOLOGRAPHY MATERIALS THEREFOR MEASURING MEASURING ANGLES MEASURING AREAS MEASURING IRREGULARITIES OF SURFACES OR CONTOURS MEASURING LENGTH, THICKNESS OR SIMILAR LINEARDIMENSIONS ORIGINALS THEREFOR PHOTOGRAPHY PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES PHYSICS SEMICONDUCTOR DEVICES TESTING
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Beschreibung
Zusammenfassung:	PROBLEM TO BE SOLVED: To easily measure a bend of coordinate measuring moving mirrors fixed to a wafer stage of an exposing device in a short time. SOLUTION: X directional and Y directional coordinates of a wafer stage 13 and yawing are measured by moving mirrors 16X and 16Y fixed on the wafer stage 13, interferometers 17X1 and 17X2 arranged so as to be opposed to these moving mirrors or the like. A reference wafer 26 is loaded on the wafer stage 13, and positions of LIA marks 28X (i, j) and 28Y (i, j) formed in known arrangement in respective shot areas SA (i, j) on the reference wafer 26 are measured by an alignment sensor, and a bending quantiry of the moving mirrors 16X and 16Y is calculated from this measured result and the known arrangement.