PRODUCTION OF SILICON CARBIDE SINGLE CRYSTAL

PROBLEM TO BE SOLVED: To produce a high-quality silicon carbide single crystal of a large diameter at a low cost in a large amt. SOLUTION: A silicon carbide single crystal layer 12 is grown on a silicon wafer by a chemical vapor phase growing method, and a silicon polycrystal layer is formed on the silicon carbide single crystal layer 12. The silicon wafer is removed by using a mixture acid of hydrofluoric acid and nitric acid and then a silicon carbide polycrystal layer 15 is formed on the surface of the silicon carbide single crystal layer 12. The silicon polycrystal layer is removed and the surface of the silicon carbide polycrystal layer 15 is adhered to a cap 4b of a crystal growing device with an adhesive 16 to fix the silicon carbide single crystal layer 12 to the cap 4b. The cap 4b is attached to the crystal growing device and a silicon carbide single crystal 18 is grown on the silicon carbide single crystal layer 12 by a sublimation recrystallization method using the silicon single crystal layer 12 as the seed.