MANUFACTURE OF SEMICONDUCTOR DEVICE WITH DOUBLE-LAYER ELECTRODE STRUCTURE

MANUFACTURE OF SEMICONDUCTOR DEVICE WITH DOUBLE-LAYER ELECTRODE STRUCTURE

PROBLEM TO BE SOLVED: To obtain a stable dielectric strength even if a gate oxide film between a floating gate and a control gate is made thin. SOLUTION: When forming an EPROM, a floating gate 4 is formed by the polycrystalline silicon which is doped with phosphorus and the phosphor is doped under c...

Ausführliche Beschreibung

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Bibliographische Detailangaben
Hauptverfasser: IWAMORI NORIYUKI, SOFUE SUSUMU, YAMAOKA TORU, KOMURA ATSUSHI, NIWA KATSUHIDE, YAMANE HIROYUKI
Format: Patent
Sprache:eng
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
MANUFACTURE OR TREATMENT THEREOF
NANOSTRUCTURES FORMED BY MANIPULATION OF INDIVIDUAL ATOMS,MOLECULES, OR LIMITED COLLECTIONS OF ATOMS OR MOLECULES ASDISCRETE UNITS
NANOTECHNOLOGY
PERFORMING OPERATIONS
SEMICONDUCTOR DEVICES
TRANSPORTING
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Beschreibung
Zusammenfassung:PROBLEM TO BE SOLVED: To obtain a stable dielectric strength even if a gate oxide film between a floating gate and a control gate is made thin. SOLUTION: When forming an EPROM, a floating gate 4 is formed by the polycrystalline silicon which is doped with phosphorus and the phosphor is doped under conditions where a particle diameter with the highest frequency among the particle diameters in the polycrystalline silicon is set to 120nm or less after doping, thus increasing and stabilizing the dielectric strength of an oxide film 5 which is formed after doping phosphorus.