PLASMA TREATMENT APPARATUS

PROBLEM TO BE SOLVED: To obtain a plasma treatment apparatus by which the diffusion of a plasma is suppressed effectively when a substrate to be treated is treated with the plasma in a plasma atmosphere, by which a highly fine treatment can be executed at a high vacuum degree and a high plasma densi...

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Bibliographische Detailangaben
Hauptverfasser:	KOSHIISHI AKIRA, HIROSE KEIZO, NAGASEKI KAZUYA, OGASAWARA MASAHIRO
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL DIFFUSION TREATMENT OF METALLIC MATERIAL ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR ELECTRICITY INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL METALLURGY MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLICMATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASSC23 AND AT LEAST ONEPROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25 NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE PLASMA TECHNIQUE PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OFNEUTRONS PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMICBEAMS SEMICONDUCTOR DEVICES SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION
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Beschreibung
Zusammenfassung:	PROBLEM TO BE SOLVED: To obtain a plasma treatment apparatus by which the diffusion of a plasma is suppressed effectively when a substrate to be treated is treated with the plasma in a plasma atmosphere, by which a highly fine treatment can be executed at a high vacuum degree and a high plasma density and, at the same time, which prevents the inside wall of a treatment container from being sputtered by the plasma. SOLUTION: A lower-side insulator 13 is installed around a susceptor 6 to be used as a lower-part electrode, and an upper-side insulator 31 is installed around an upper-part electrode 21. The outer end part 31a of the upper insulator 31 is situated at the outside of the lower-side insulator 13, and it is situated in a position which is lower than the surface of a wafer W. A narrowest gap L between the lower-side insulator 13 and the upper-side insulator 31 is made narrower than a gap G between the electrodes. Since the diffusion of a plasma generated between the electrodes is suppressed so as not to be diffused to side parts as it is, the inside wall of a treatment container 3 is not sputtered.