MANUFACTURE OF SEMICONDUCTOR DEVICE AND MANUFACTURE OF SEMICONDUCTOR LASER

MANUFACTURE OF SEMICONDUCTOR DEVICE AND MANUFACTURE OF SEMICONDUCTOR LASER

PROBLEM TO BE SOLVED: To provide the manufacturing method of semiconductor devices and the manufacturing method of a semiconductor laser which can remove foreign matters-on the surfaces. SOLUTION: On a P-type InP substrate 1 in a water shape, a p-type InP lower clad layer 2, an InGaAsP active layer...

Ausführliche Beschreibung

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Bibliographische Detailangaben
1. Verfasser: MORI KENZO
Format: Patent
Sprache:eng
Schlagworte:
BASIC ELECTRIC ELEMENTS
DEVICES USING STIMULATED EMISSION
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:PROBLEM TO BE SOLVED: To provide the manufacturing method of semiconductor devices and the manufacturing method of a semiconductor laser which can remove foreign matters-on the surfaces. SOLUTION: On a P-type InP substrate 1 in a water shape, a p-type InP lower clad layer 2, an InGaAsP active layer 3 and an N-type InP upper clad layer 4 are formed by the first epitaxial crystal growth using an MOCVD method. The surface of the wafer is treated with nitric acid.