FORMATION OF SILICON NITRIDE FILM AND SILICON NITRIDE FILM

PROBLEM TO BE SOLVED: To obtain a silicon nitride film which has high flatness and an excellent oxidation resistance and is free from tearing by thermally nitriding a natural oxide film on a silicon substrate by treating the silicon substrate for a specific period of time at a temperature within a s...

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Bibliographische Detailangaben
Hauptverfasser:	ASARI SHIN, NAKAMURA KYUZO, TAKAHASHI SEIICHI, MIHASHI TETSUO, OTA YOSHIFUMI
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL DIFFUSION TREATMENT OF METALLIC MATERIAL ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL METALLURGY SEMICONDUCTOR DEVICES SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION
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Beschreibung
Zusammenfassung:	PROBLEM TO BE SOLVED: To obtain a silicon nitride film which has high flatness and an excellent oxidation resistance and is free from tearing by thermally nitriding a natural oxide film on a silicon substrate by treating the silicon substrate for a specific period of time at a temperature within a specific temperature range under the presence of ammonia. SOLUTION: A silicon nitride film 1 is formed by thermally nitriding a natural oxide film 5 on a silicon substrate 5 by treating the substrate 4 for 10 to 120 minutes at a temperature of 500 deg.C to 1,000 deg.C under the presence of ammonia. Successively, another silicon nitride film 2 is vapor-grown on the film 1 so that the thickness distribution of the films 1 and 2 can be within ±2%. Therefore, a silicon nitride film having a small thickness distribution and excellent flatness can be formed, because the vapor growth advances uniformly without receiving any influence from the natural oxide film.