METHOD FOR FORMING POLY CRYSTAL SILICON FILM

PROBLEM TO BE SOLVED: To easily and positively form polycrystal silicon film by applying a specific hydrogenation silicon in a liquid shape onto a substrate and applying energy beams to a-Si film formed by decomposition reaction by a thermal history containing a temperature-increase process. SOLUTION: When hydrogenation silicon in a liquid shape containing Sim H2m +2 and Sin H2n (m and n are integers (m>=5 and n>=4)) is applied to a substrate and is subjected to decomposition reaction by heat history, a-Si film is formed via a nonunifom reaction by thermal energy when the hydrogenation silicon goes through a thermal history including the temperature-increase process. Then, since many (-SiH2 -)n (n is an integer which is equal to 1 or larger) connections exist in the film in the middle process of temperature increase, only two connection hands out of four connection hands of one Si are connected to the other Si atom in many cases immediately after hydrogen leaves in the temperature increase process when crystallizing the a-Si film. Therefore, recombination and structure relaxation easily occur at the time of crystallization, thus forming Poly-Si film with a large crystal particle diameter and less lattice defect.