WIRING STRUCTURE OF SEMICONDUCTOR INTEGRATED CIRCUIT AND FORMING METHOD

PROBLEM TO BE SOLVED: To not allow increase of propagation delay and wiring density and reduce crosstalk noise by covering the rear surface of the wiring provided on a semiconductor integrated circuit with a conductive material having a higher permeability. SOLUTION: The rear surface of wiring 1 provided on a semiconductor integrated circuit is covered with a conductive layer 2 having high permeability. That is, after a wiring 1 is formed, entire part of wiring 1 is covered with a film 2 having higher permeability and the film 2 having high permeability is left at the side surface of the wiring 1 by the dry etching method. Thereby, a wiring structure of which side surface is covered with the conductive film 2 having high permeability can be formed. It is enough to use a CVD(chemical vapor deposition) or a sputtering method to cover the entire part of the wiring 1 with the high permeability film 2. The high permeability film 2 for the covering purpose is formed a little thicker than the target thickness, estimating some reduction of the side surface by the dry etching as the post process. As a high permeability film 2, Permalloy is used.