PATTERN FORMING MATERIAL AND PATTERN FORMING METHOD USING SAME

PATTERN FORMING MATERIAL AND PATTERN FORMING METHOD USING SAME

PROBLEM TO BE SOLVED: To form a high resolution pattern by incorporating an alkali-soluble polymer, an acid precursor forming halogen acid when irradiated with active chemical rays and a specified onium compd. SOLUTION: This pattern forming material contains an alkali-soluble polymer, an acid precur...

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Bibliographische Detailangaben
Hauptverfasser: UTAKA SONOKO, UCHINO MASAICHI
Format: Patent
Sprache:eng
Schlagworte:
APPARATUS SPECIALLY ADAPTED THEREFOR
BASIC ELECTRIC ELEMENTS
CINEMATOGRAPHY
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
ELECTROGRAPHY
HOLOGRAPHY
MATERIALS THEREFOR
ORIGINALS THEREFOR
PHOTOGRAPHY
PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES
PHYSICS
SEMICONDUCTOR DEVICES
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Zusammenfassung:PROBLEM TO BE SOLVED: To form a high resolution pattern by incorporating an alkali-soluble polymer, an acid precursor forming halogen acid when irradiated with active chemical rays and a specified onium compd. SOLUTION: This pattern forming material contains an alkali-soluble polymer, an acid precursor forming halogen acid when irradiated with active chemical rays and one of onium compds. represented by formulae I, II, etc., preferably by 100 pts.wt., 1-30 pts.wt. and 1-30 pts.wt., respectively. In the formulae I, II, each of R1 -R3 is H,