PRODUCTION OF SINGLE CRYSTAL RAW MATERIAL OF CESIUM LITHIUM BORATE

PROBLEM TO BE SOLVED: To provide a method for producing a raw material for growing a single crystal of cesium lithium borate having a uniform composition while suppressing rapid foaming which causes ununiformity of the composition. SOLUTION: In producing a raw material for growing single crystal of...

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Bibliographische Detailangaben
1. Verfasser:	NAGAHORI JUNJI
Format:	Patent
Sprache:	eng
Schlagworte:	AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE APPARATUS THEREFOR CHEMISTRY CRYSTAL GROWTH DEVICES OR ARRANGEMENTS, THE OPTICAL OPERATION OF WHICH ISMODIFIED BY CHANGING THE OPTICAL PROPERTIES OF THE MEDIUM OF THEDEVICES OR ARRANGEMENTS FOR THE CONTROL OF THE INTENSITY,COLOUR, PHASE, POLARISATION OR DIRECTION OF LIGHT, e.g.SWITCHING, GATING, MODULATING OR DEMODULATING FREQUENCY-CHANGING METALLURGY NON-LINEAR OPTICS OPTICAL ANALOGUE/DIGITAL CONVERTERS OPTICAL LOGIC ELEMENTS OPTICS PHYSICS PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE REFINING BY ZONE-MELTING OF MATERIAL SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE SINGLE-CRYSTAL-GROWTH TECHNIQUES OR PROCEDURES FOR THE OPERATION THEREOF UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL
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Beschreibung
Zusammenfassung:	PROBLEM TO BE SOLVED: To provide a method for producing a raw material for growing a single crystal of cesium lithium borate having a uniform composition while suppressing rapid foaming which causes ununiformity of the composition. SOLUTION: In producing a raw material for growing single crystal of cesium lithium borate from a cesium compound, a lithium compound and boron oxide and boric acid, boron oxide or boric acid in which 1-100wt.%, preferably 5-30wt.% water is absorbed is used and baking of these starting raw materials are carried out at 200-500 deg.C, preferably 250-400 deg.C.