MANUFACTURE OF SEMICONDUCTOR DEVICE

PROBLEM TO BE SOLVED: To provide a method for manufacturing a vertical-type PNP transistor with a high hFE, a high Early voltage, and a high frequency characteristic in a method far manufacturing a semiconductor device for forming at least an NPN transistor and a vertical-type PNP transistor the same substrate. SOLUTION: After forming an N-type buried layer 2, a P-type buried layer 3, an N-type epitaxial layer 4, and a P-type collector-leading diffusion layer 6 on a P-type substrate 1, phosphor is ion-implanted into a base region, and BF2 is ion-implanted to an emitter region and a collector contact region to effect annealing, and an N-type base layer 7, an N-type external base layer 8, a P-type emitter layer 10, and a P-type collector contact diffusion layer 9 are formed. Then, a P-type emitter polysilicon 13 and a P-type collector polysilicon 14 are formed by a P-type polysilicon where the BF2 is ion-implanted, thus manufacturing a vertical-type PNP transistor.