MANUFACTURE OF SEMICONDUCTOR DEVICE

PROBLEM TO BE SOLVED: To suppress generation of photoresist remnants by efficiently removing a resist deterioration layer in a manufacturing method of a semiconductor device performing dry etching of a conductive layer by using a gas containing bromine or the like. SOLUTION: At the time of performing an etching process on a conductive film 3 formed on a semiconductor substrate 1 by using gas containing bromine, a photoresist 4 is applied on the conductive film 3 so as to perform etching of the conductive film 3 while having the photoresist 4 as a mask. Thereafter, a semiconductor wafer is washed by using a diluted fluoric acid water to remove a resist deterioration layer 5 followed by performing ashing for removing the photoresist.