PARTICLE-TREATED SEMICONDUCTOR WAFER MANUFACTURING METHOD

PROBLEM TO BE SOLVED: To produce a surface particle number-controlled semiconductor wafer by taking a specified amt. of particle dispersed liq. and dispensed on the surface of a semiconductor wafer, the wafer is heated to evaporate the solvent in this liq. SOLUTION: Particles of a weight obtained from a previously formed calibration curve are added to a specified vol. of solvent to prepare a particle-dispersed liq. of required particle concn. A specified amount is taken by a pipette 1 and divided and dispensed on the surface of a semiconductor wafer 4 uniformly without deviation over the entire surface, the wafer is heated to remove the solvent from the divided and dispensed particle liq. 3, thereby leaving the particles as residual particles 5 on the wafer 4. Thus it is possible to produce a particle-treated semiconductor wafer with controlled number of surface deposited particles by a convenient method.