MANUFACTURE OF SEMICONDUCTOR DEVICE

PROBLEM TO BE SOLVED: To reduce volume change shown by a buried silicon oxide film during high temperature heat treatment by forming a groove part in a substrate, depositing an SiOx film in a groove part, removing an SiOx film except a groove part and thermally treating an SiOx film in oxidizing env...

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Bibliographische Detailangaben
1. Verfasser:	EGAWA HIDEMITSU
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS SEMICONDUCTOR DEVICES TECHNICAL SUBJECTS COVERED BY FORMER USPC TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ARTCOLLECTIONS [XRACs] AND DIGESTS
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Beschreibung
Zusammenfassung:	PROBLEM TO BE SOLVED: To reduce volume change shown by a buried silicon oxide film during high temperature heat treatment by forming a groove part in a substrate, depositing an SiOx film in a groove part, removing an SiOx film except a groove part and thermally treating an SiOx film in oxidizing environment. SOLUTION: A surface of a silicon substrate 11 is covered with a mask material 12 and a groove part 13 is formed in an isolation region. A silicon- excess silicon oxide film (SiOx whereinx is 0