MANUFACTURE OF CAPACITOR OF SEMICONDUCTOR DEVICE

PROBLEM TO BE SOLVED: To provide a method of manufacturing the capacitor of a semiconductor device. SOLUTION: A method of manufacturing this capacitor comprises a stage for forming a lower electrode 15 on a semiconductor substrate 11, a stage for performing a plasma treatment on the electrode 15 using gas containing nitrogen and oxygen gases, a stage for forming a dielectric film 17 on the electrode 15 subjected to plasma treatment and a stage for forming an upper electrode 19 on the film 17. Thereby, a capacitor 20 having superior electrical characteristics can be made even from a comparatively thin equivalent oxide film.