MANUFACTURE OF SEMICONDUCTOR DEVICE AND SEMICONDUCTOR MANUFACTURE DEVICE USED THEREFOR

PROBLEM TO BE SOLVED: To enable an insulating film formed through a high-density plasma CVD method and a metal interconnection film to be surely bonded together. SOLUTION: The surface 2a of a first interconnection layer 2 of tungsten or the like formed on a semiconductor wafer 1 is etched as far as...

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Bibliographische Detailangaben
Hauptverfasser:	SAIKAWA KENJI, TAMARU TAKESHI
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL DIFFUSION TREATMENT OF METALLIC MATERIAL ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL METALLURGY MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLICMATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASSC23 AND AT LEAST ONEPROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25 NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE SEMICONDUCTOR DEVICES SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION
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Beschreibung
Zusammenfassung:	PROBLEM TO BE SOLVED: To enable an insulating film formed through a high-density plasma CVD method and a metal interconnection film to be surely bonded together. SOLUTION: The surface 2a of a first interconnection layer 2 of tungsten or the like formed on a semiconductor wafer 1 is etched as far as 200 or so through an argon sputtering method, and the oxidized surface 2a of the first interconnection layer 2 is removed. By this setup, an insulating film 11 is formed after the activated surface 2b of the interconnection layer 2 is exposed.