NON-VOLATILE SEMICONDUCTOR MEMORY

PROBLEM TO BE SOLVED: To enable the detection of disconnection of a word line in an electrically reloadable non-volatile semiconductor memory. SOLUTION: Word line non-selection level supply circuits (WDM, RWDM) are provided at a far end part of a word line with respect to word drivers (WDV, RWDV) for driving the word line from one end part thereof to supply a word line non-selection level (Vss) differentiated from a word selection level (Vdd) during the reading of data to the far end part under a lower supply capacity than the supply capacity of the selection level with a disconnected part of a disconnected word line as boundary in a specified mode. Thus, the poor disconnection of the word line can be detected as difference in the data reading state attributed to the difference in the level of the word line between the right and left of the disconnected part.