SEMICONDUCTOR MANUFACTURING APPARATUS

PROBLEM TO BE SOLVED: To form a crystalline semiconductor film without damage by forming an insulation film covering a catalyst source film on an insulative substrate, forming an amorphous semiconductor film on the insulation film and crystallizing the amorphous film. SOLUTION: A catalyst source film 3 is formed on the surface of an insulative substrate 2. An insulative film 4 is formed. First contact holes 5 are formed on the surface of the film 4. An amorphous Si (a-Si) film 14 is formed on the film 4 as a semiconductor film, and the glass substrate having the film 14 is annealed in a N atmosphere to crystallize the film 14 while a catalyst element in the film 3 is introduced in the film 14 through the contact holes 5.