MATERIAL FOR SEMICONDUCTOR PRODUCING APPARATUS AND PRODUCTION THEREOF

PROBLEM TO BE SOLVED: To obtain both a material for an apparatus for producing a semiconductor usable as a part for an apparatus for producing a semiconductor product in a high-temperature range of >=1,200 deg.C by improving heat resistance of a quartz glass while taking advantage of characterist...

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Bibliographische Detailangaben
Hauptverfasser:	SUTANI KIYOSHI, ARAHORI TADAHISA, OKAMOTO KIMITAKA
Format:	Patent
Sprache:	eng
Schlagworte:	AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE APPARATUS THEREFOR BASIC ELECTRIC ELEMENTS CHEMICAL COMPOSITION OF GLASSES, GLAZES, OR VITREOUSENAMELS CHEMISTRY CRYSTAL GROWTH ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY GLASS JOINING GLASS TO GLASS OR OTHER MATERIALS MANUFACTURE, SHAPING, OR SUPPLEMENTARY PROCESSES METALLURGY MINERAL OR SLAG WOOL PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE REFINING BY ZONE-MELTING OF MATERIAL SEMICONDUCTOR DEVICES SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE SINGLE-CRYSTAL-GROWTH SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS,MINERALS OR SLAGS SURFACE TREATMENT OF GLASS UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL
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Beschreibung
Zusammenfassung:	PROBLEM TO BE SOLVED: To obtain both a material for an apparatus for producing a semiconductor usable as a part for an apparatus for producing a semiconductor product in a high-temperature range of >=1,200 deg.C by improving heat resistance of a quartz glass while taking advantage of characteristics of slight contamination of the quartz glass to a Si wafer and suppressing the release of the coated film caused by difference in coefficient of thermal expansion between the quartz glass and the coated film and a material for an apparatus for producing a semiconductor such as a susceptor in a CVD heat process at 900 deg.C and =1,200 deg.C to form a protecting film comprising a dense silicon carbide.