PRODUCTION OF SILICON CARBIDE SINGLE CRYSTAL

PROBLEM TO BE SOLVED: To produce silicon carbide single crystals which have a large diameter and are free from micropipe defects in a large quantity at a low cost. SOLUTION: A single crystal layer 15 of (110) face cubic crystal silicon carbide is grown by a chemical vapor growth method on a silicon wafer 14 of a (110) face bearing. The silicon wafer 14 of the (110) face bearing is removed by using a liquid mixture composed of hydrofluoric acid and nitric acid. The single crystal layer 15 of the (110) face cubic crystal silicon carbide is then joined to a cap member 4b of an apparatus for growing the crystal by an adhesive 16, by which the single crystal layer 15 of the (110) face cubic crystal silicon carbide is fixed to the cap material 4b. This cap member 4b is mounted at the apparatus for growing the single crystal and the signal crystal 19 of the (112*0) face α type silicon carbide is grown on the single crystal layer 15 of the (110) face cubic crystal silicon carbide with the single crystal layer 15 of the (110) face cubic crystal silicon carbide as a seed by a sublimation recrystallization method.