THIN FILM DEPOSITING DEVICE AND METHOD FOR DEPOSITING THIN FILM UTILIZING IT
PROBLEM TO BE SOLVED: To make it possible to deposit a thin film of an even thickness on a substrate, on which multiform films and the like exist, by a method wherein the temperature of a precursor solution transferred to a droplet spray device is adjusted, the precursor solution is made to convert...
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| creator | BOKU KATSUYOSHI BUN GENSEKI U SEIICHI TEI GENSHIN |
| description | PROBLEM TO BE SOLVED: To make it possible to deposit a thin film of an even thickness on a substrate, on which multiform films and the like exist, by a method wherein the temperature of a precursor solution transferred to a droplet spray device is adjusted, the precursor solution is made to convert into droplets and the droplets are injected, in a chamber wherein the pressure is adjusted, through a nozzle and are deposited on the substrate put on a stage. SOLUTION: In this thin film depositing device, a pump 3 makes a precursor solution transfer to a droplet spray device 5 and the droplet spray device 5 makes the temperature of the transferred precursor solution constant and makes the transferred solution convert into droplets utilizing ultrasonic waves. The droplets are flowed in a chamber 9 by transporting gas of a flow rate controlled by a mass flow velocity controller 7 and a stage 11 to be placed with a substrate R is installed in the chamber 9. Moreover, a pressure adjusting means 18 for adjusting the pressure in the chamber 9 is provided. In such a way, while the temperature of the transferred precursor solution is adjusted at 30 to 70 deg.C, the droplets are generated from the solution utilizing the device 5 and after that, the droplets are made to transfer into the chamber 9 to deposit on the substrate 8 for one to 20 minutes. |
| format | Patent |
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SOLUTION: In this thin film depositing device, a pump 3 makes a precursor solution transfer to a droplet spray device 5 and the droplet spray device 5 makes the temperature of the transferred precursor solution constant and makes the transferred solution convert into droplets utilizing ultrasonic waves. The droplets are flowed in a chamber 9 by transporting gas of a flow rate controlled by a mass flow velocity controller 7 and a stage 11 to be placed with a substrate R is installed in the chamber 9. Moreover, a pressure adjusting means 18 for adjusting the pressure in the chamber 9 is provided. In such a way, while the temperature of the transferred precursor solution is adjusted at 30 to 70 deg.C, the droplets are generated from the solution utilizing the device 5 and after that, the droplets are made to transfer into the chamber 9 to deposit on the substrate 8 for one to 20 minutes.</description><edition>6</edition><language>eng</language><subject>BASIC ELECTRIC ELEMENTS ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; SEMICONDUCTOR DEVICES</subject><creationdate>1997</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=19970815&DB=EPODOC&CC=JP&NR=H09213643A$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,780,885,25563,76318</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=19970815&DB=EPODOC&CC=JP&NR=H09213643A$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>BOKU KATSUYOSHI</creatorcontrib><creatorcontrib>BUN GENSEKI</creatorcontrib><creatorcontrib>U SEIICHI</creatorcontrib><creatorcontrib>TEI GENSHIN</creatorcontrib><title>THIN FILM DEPOSITING DEVICE AND METHOD FOR DEPOSITING THIN FILM UTILIZING IT</title><description>PROBLEM TO BE SOLVED: To make it possible to deposit a thin film of an even thickness on a substrate, on which multiform films and the like exist, by a method wherein the temperature of a precursor solution transferred to a droplet spray device is adjusted, the precursor solution is made to convert into droplets and the droplets are injected, in a chamber wherein the pressure is adjusted, through a nozzle and are deposited on the substrate put on a stage. SOLUTION: In this thin film depositing device, a pump 3 makes a precursor solution transfer to a droplet spray device 5 and the droplet spray device 5 makes the temperature of the transferred precursor solution constant and makes the transferred solution convert into droplets utilizing ultrasonic waves. The droplets are flowed in a chamber 9 by transporting gas of a flow rate controlled by a mass flow velocity controller 7 and a stage 11 to be placed with a substrate R is installed in the chamber 9. Moreover, a pressure adjusting means 18 for adjusting the pressure in the chamber 9 is provided. 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SOLUTION: In this thin film depositing device, a pump 3 makes a precursor solution transfer to a droplet spray device 5 and the droplet spray device 5 makes the temperature of the transferred precursor solution constant and makes the transferred solution convert into droplets utilizing ultrasonic waves. The droplets are flowed in a chamber 9 by transporting gas of a flow rate controlled by a mass flow velocity controller 7 and a stage 11 to be placed with a substrate R is installed in the chamber 9. Moreover, a pressure adjusting means 18 for adjusting the pressure in the chamber 9 is provided. In such a way, while the temperature of the transferred precursor solution is adjusted at 30 to 70 deg.C, the droplets are generated from the solution utilizing the device 5 and after that, the droplets are made to transfer into the chamber 9 to deposit on the substrate 8 for one to 20 minutes.</abstract><edition>6</edition><oa>free_for_read</oa></addata></record> |
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| subjects | BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES |
| title | THIN FILM DEPOSITING DEVICE AND METHOD FOR DEPOSITING THIN FILM UTILIZING IT |
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