SEMICONDUCTOR LIGHT EMITTING ELEMENT, ITS ELECTRODE, AND ITS MANUFACTURE

PROBLEM TO BE SOLVED: To provide a highly reliable inexpensive electrode which can efficiently fetch light from an active layer as an ohmic electrode for semiconductor light emitting element, a semiconductor light emitting element using the electrode, and a method for manufacturing the element. SOLUTION: Electrodes for semiconductor light emitting element have laminated metallic thin films 2 and 4 formed on a pellet 1 having double heterojunctions and a layer containing oxygen at a high concentration or an oxide layer 3 formed, between the thin films 2 and 4 by annealing the thin film 2 and high electric conductivity and light transmissivity required for the electrode are obtained from the multilayer effect of the thin films 2 and 4 and layer 3. A semiconductor light emitting element using the electrode has high luminous efficacy and high reliability and can be reduced in cost. In a method for manufacturing the element, an electrode structure can be obtained stably by forming the oxide film 3 between the metallic thin films 2 and 4 by annealing the thin film 2 in an atmosphere containing oxygen after the thin films 2 and 4 are formed.