OXIDIZER FOR SEMICONDUCTOR DEVICE AND METHOD FOR OXIDE FILM FORMATION USING IT

PROBLEM TO BE SOLVED: To provide an oxidizer wherein a phenomenon of deposited oxide films being varied in thickness from one batch to another is minimized by manually calculating oxide film deposition time. SOLUTION: This oxidizer contains an oxide film depositing means 3 for forming an oxide film of a desired thickness on a wafer, an oxide film thickness measuring means and a control means. Thus the control means in the oxidizer automatically calculates an oxide film deposition time corresponding to the target thickness of the oxide film. This simplifies operation, and minimizes a phenomenon of deposited oxide films being varied in thickness from one batch to another, which enhances the reliability of the process and enables the production of more highly uniform products.