METHOD AND APPARATUS FOR FORMING FILM AND MANUFACTURE OF SEMICONDUCTOR DEVICE

PROBLEM TO BE SOLVED: To obtain a CVD film of which quality with a uniform film thickness by feeding a gas which does not relate to film formation from the rear surface side of a base to a gap of the periphery of the front surface, locally heating a base suppressing member contact area upon heating the base, and forming the film on the surface of the base with the reaction gas of the front surface side. SOLUTION: A substrate 2 is pressed from its rear surface, the periphery of the front surface is brought into contact with the ring-like substrate suppressing member 5, and the space of the front and rear surface sides of the substrate 2 is sealed and separated by O-ring sealing between the member 5 and the bottom ring 10. Heating medium is fed to the wall of a reaction chamber 9 so as not to condense CVD gas to prevent the formation of a reaction film onto the wall. The member 5 is cooled to the film forming lower limit temperature or lower by the refrigerant to prevent the adherence of the reaction film to the front surface. Further, an invert gas of the rear surface side of the substrate 2 is sprayed to the front surface of the substrate 2 from the fine gaps to the lower surface of the member 5 to suppress the creeping of the CVD gas to the rear surface, thereby preventing the peel of the film upon formation of the film onto the rear surface of the board 2 and the wall to the rear surface side.