GAS INLET PORT MEMBER OF CHEMICAL VAPOR DEPOSITION APPARATUS

PROBLEM TO BE SOLVED: To provide a gas inlet port member of chemical vapor deposition apparatus which can prevent corrosion, abrasion, deformation, gas leak through the gas inlet port by improving heat radiating effect of the gas inlet port to be coupled to a branching pipe of a vertical diffusion f...

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Bibliographische Detailangaben
Hauptverfasser: RI NANSHIN, KOU KAKUSHIYUN, KEN SEIKAN, SAI SOUKOKU
Format: Patent
Sprache:eng
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Zusammenfassung:PROBLEM TO BE SOLVED: To provide a gas inlet port member of chemical vapor deposition apparatus which can prevent corrosion, abrasion, deformation, gas leak through the gas inlet port by improving heat radiating effect of the gas inlet port to be coupled to a branching pipe of a vertical diffusion furnace of a chemical vapor deposition apparatus. SOLUTION: A plurality of disc heat radiating plates 21 of predetermined thickness are formed, to radiate the heat conducted from a branching pipe, to the external circumference surface of a gas inlet port 20 to be coupled to a branching pipe of a vertical diffusion furnace of a chemical vapor deposition apparatus to be used in the semiconductor device manufacturing process and a plurality of air ventilating holes 21a are formed in each heat radiating plate 21. Thereby, the heat generated at the gas inlet port 20 is radiated to the open air through the heat radiating plate 21 and air ventilating hole 21a.