SEMICONDUCTOR STORAGE

PROBLEM TO BE SOLVED: To inspect the redundant memory cell without any destruction and to find the failure of the redundant memory cell before redundancy processing and hence improve the success rate for rescuing a defective memory cell. SOLUTION: A redundancy memory forced section circuit 10 is provided in addition to a redundancy memory array 2 and a redundancy selection circuit 3 and a redundancy memory forced selection signal RSEL and a redundancy memory address RADR are inputted to each redundancy memory forced selection circuit 10. When the redundancy memory forced selection signal RSEL is enabled, a redundancy memory colunm specified by the redundancy memory address RADR is selected from the redundancy memory array 2 regardless of the fuse blow information of the redundancy selection circuit 3, the specified redundancy memory cell is selected along with a bit line selected by a column decoder 5, and access is made to it, thus inspecting the redundancy memory cell without any destruction.