METHOD AND APPARATUS FOR MANUFACTURING SEMICONDUCTOR

PURPOSE: To provide a method and an apparatus for manufacturing a semiconductor improving the uniformity of treatment characteristics such as film thickness and density in a treatment unit on a workpiece. CONSTITUTION: The apparatus for manufacturing a semiconductor comprises a cover member 5 for fo...

Ausführliche Beschreibung

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Bibliographische Detailangaben
Hauptverfasser: FUKADA HIROSHI, TAKAISHI MASARU, SAKA SOICHIRO
Format: Patent
Sprache:eng
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Beschreibung
Zusammenfassung:PURPOSE: To provide a method and an apparatus for manufacturing a semiconductor improving the uniformity of treatment characteristics such as film thickness and density in a treatment unit on a workpiece. CONSTITUTION: The apparatus for manufacturing a semiconductor comprises a cover member 5 for forming a reaction chamber 4 for conducting CVD treatment to a semiconductor wafer 2, a susceptor 6 for holding the wafer 2, a gas supply unit for supplying reaction gas 3 via a gas discharge port 7 installed oppositely to the wafer 2, an exhaust system 10 having an exhaust port 9 installed at the outer periphery 7a of the port 7, and four exhaust tubes 11 installed at the four corners 9 of the port 9 in communication with the port 9 and an exhaust tube 11 installed at the vicinity 10a of the center of the system 10. When the gas 3 is exhausted via the plurality of the tubes 11, the flow rates of the gases 3 passing the tubes 11 are regulated at the respective tubes 11 by flow rate regulating means provided at the tubes 11.