FORMING METHOD OF STACKED STRUCTURE FILM

PROBLEM TO BE SOLVED: To prevent the imposition of damage on a driving area part of a lower stacked film when a stacked structure film of an EL element or the like is formed. SOLUTION: A material by stacking a first electrode 2, a first insulating layer 3, a light emitting layer 4, a second insulati...

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Bibliographische Detailangaben
Hauptverfasser: KONISHI YOUICHI, TAKAHASHI NOBUYUKI, HAGIWARA TAKASHI
Format: Patent
Sprache:eng
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Zusammenfassung:PROBLEM TO BE SOLVED: To prevent the imposition of damage on a driving area part of a lower stacked film when a stacked structure film of an EL element or the like is formed. SOLUTION: A material by stacking a first electrode 2, a first insulating layer 3, a light emitting layer 4, a second insulating layer 5 and a second electrode 6 on a glass substrate, is placed on a taking-out electrode film forming holder 9, and after a mask 8 to determine a forming area of a taking-out electrode is installed, a film of the taking out electrode 7 is formed by a sputtering device. Here, when a recessed part 8b is arranged in a mask 8, the imposition of damage on the second electrode 6 can be prevented.