FORMING METHOD OF STACKED STRUCTURE FILM
PROBLEM TO BE SOLVED: To prevent the imposition of damage on a driving area part of a lower stacked film when a stacked structure film of an EL element or the like is formed. SOLUTION: A material by stacking a first electrode 2, a first insulating layer 3, a light emitting layer 4, a second insulati...
Gespeichert in:
Hauptverfasser: | , , |
---|---|
Format: | Patent |
Sprache: | eng |
Schlagworte: | |
Online-Zugang: | Volltext bestellen |
Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
Zusammenfassung: | PROBLEM TO BE SOLVED: To prevent the imposition of damage on a driving area part of a lower stacked film when a stacked structure film of an EL element or the like is formed. SOLUTION: A material by stacking a first electrode 2, a first insulating layer 3, a light emitting layer 4, a second insulating layer 5 and a second electrode 6 on a glass substrate, is placed on a taking-out electrode film forming holder 9, and after a mask 8 to determine a forming area of a taking-out electrode is installed, a film of the taking out electrode 7 is formed by a sputtering device. Here, when a recessed part 8b is arranged in a mask 8, the imposition of damage on the second electrode 6 can be prevented. |
---|