MANUFACTURE OF SEMICONDUCTOR DEVICE

PROBLEM TO BE SOLVED: To manufacture a semiconductor device having a highly resistive load device portion in a stable manner. SOLUTION: A polycrystalline Si film 43 is formed by deposition, so as to have a film thickness of 40nm or greater, which is thicker than the film thickness at which the i-lin...

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1. Verfasser: KUROKAWA ATSUO
Format: Patent
Sprache:eng
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Zusammenfassung:PROBLEM TO BE SOLVED: To manufacture a semiconductor device having a highly resistive load device portion in a stable manner. SOLUTION: A polycrystalline Si film 43 is formed by deposition, so as to have a film thickness of 40nm or greater, which is thicker than the film thickness at which the i-line reflectivity is a maximum. The polycrystalline Si film 43 is patterned into a resistive element by anisotropic etching using a photoresist 44 as a mask. then, the exposed surface of the polycrystalline Si film 43 is oxidized, thus an SiO2 film 45 having a thickness of 15 to 20nm is formed. Although the deposition of the polycrystalline Si film 43 is easy, halation in lithography process with respect to the photoresist 44 can be avoided even if the base has a noticeable roughness. Further, the polycrystalline Si film 43 is thinned to 25 to 20nm as the final film thickness.