LONGITUDINAL DIRECTION TYPE DIFFUSION FURNACE AND CAP THAT IS USED FOR IT

PROBLEM TO BE SOLVED: To minimize the nonuniformity in the process in a reaction tube with a reaction gas exhaust hole to improve the equipment efficiency by forming this hole through a cap extending down through a flange. SOLUTION: A reaction tube 2 is vertically disposed in a vertical diffusion ov...

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Bibliographische Detailangaben
Hauptverfasser:	KIN SOUUN, SAI SOUKOKU
Format:	Patent
Sprache:	eng
Schlagworte:	AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE APPARATUS THEREFOR BASIC ELECTRIC ELEMENTS CHEMISTRY CRYSTAL GROWTH ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY METALLURGY PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE REFINING BY ZONE-MELTING OF MATERIAL SEMICONDUCTOR DEVICES SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE SINGLE-CRYSTAL-GROWTH UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL
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Beschreibung
Zusammenfassung:	PROBLEM TO BE SOLVED: To minimize the nonuniformity in the process in a reaction tube with a reaction gas exhaust hole to improve the equipment efficiency by forming this hole through a cap extending down through a flange. SOLUTION: A reaction tube 2 is vertically disposed in a vertical diffusion oven, a boat 23 loaded with a wafer 25 in the tube 2 is supported by a cap 27 located below the boat, and the boat and cap are installed in the tube 21 with a flange 29 located at the bottom of the cap 27. At a diffusion step, a reaction gas fed into the tube 21 through a reaction gas entrance 31 is diffused to react on the surface of the wafer 25 in the tube 21 and discharged through a reaction gas exhaust 33 hole which is located below the flange 29 and formed at a lower part of the cap 27.