PYROLYTIC BORON NITRIDE VESSEL AND ITS PRODUCTION
PROBLEM TO BE SOLVED: To obtain a pyrolytic BN vessel having high light transmissivity, capable of radiant heating and suitable for use in the production of a III-V compd. semiconductor single crystal by bringing a boron halide and NH3 into a pyrolysis reaction at a specified temp. under a specified...
Gespeichert in:
| Hauptverfasser: | , , , |
|---|---|
| Format: | Patent |
| Sprache: | eng |
| Schlagworte: | |
| Online-Zugang: | Volltext bestellen |
| Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
| container_end_page | |
|---|---|
| container_issue | |
| container_start_page | |
| container_title | |
| container_volume | |
| creator | YANAGISAWA ISAO HAGIWARA KOJI IWAI RYOJI KIMURA NOBORU |
| description | PROBLEM TO BE SOLVED: To obtain a pyrolytic BN vessel having high light transmissivity, capable of radiant heating and suitable for use in the production of a III-V compd. semiconductor single crystal by bringing a boron halide and NH3 into a pyrolysis reaction at a specified temp. under a specified pressure. SOLUTION: A gaseous born halide and gaseous ammonia are fed into a reaction furnace and brought into a pyrolysis reaction at 1,800-1,900 deg.C under 0.6-4.5Torr pressure and the resultant product is formed into the objective pyrolytic BN vessel having >=10% light transmissivity and an absorbance of |
| format | Patent |
| fullrecord | <record><control><sourceid>epo_EVB</sourceid><recordid>TN_cdi_epo_espacenet_JPH09118591A</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>JPH09118591A</sourcerecordid><originalsourceid>FETCH-epo_espacenet_JPH09118591A3</originalsourceid><addsrcrecordid>eNrjZDAMiAzy94kM8XRWcPIP8vdT8PMMCfJ0cVUIcw0OdvVRcPRzUfAMCVYICPJ3CXUO8fT342FgTUvMKU7lhdLcDIpuriHOHrqpBfnxqcUFicmpeakl8V4BHgaWhoYWppaGjsbEqAEAfUEnGA</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>PYROLYTIC BORON NITRIDE VESSEL AND ITS PRODUCTION</title><source>esp@cenet</source><creator>YANAGISAWA ISAO ; HAGIWARA KOJI ; IWAI RYOJI ; KIMURA NOBORU</creator><creatorcontrib>YANAGISAWA ISAO ; HAGIWARA KOJI ; IWAI RYOJI ; KIMURA NOBORU</creatorcontrib><description>PROBLEM TO BE SOLVED: To obtain a pyrolytic BN vessel having high light transmissivity, capable of radiant heating and suitable for use in the production of a III-V compd. semiconductor single crystal by bringing a boron halide and NH3 into a pyrolysis reaction at a specified temp. under a specified pressure. SOLUTION: A gaseous born halide and gaseous ammonia are fed into a reaction furnace and brought into a pyrolysis reaction at 1,800-1,900 deg.C under 0.6-4.5Torr pressure and the resultant product is formed into the objective pyrolytic BN vessel having >=10% light transmissivity and an absorbance of <=1 at 3.700-6.500cm<-1> wave number in the case of 1mm thickness. A III-V compd. semiconductor single crystal such as GaAs single crystal is produced using the vessel as a crucible by the Czochralski method with a sealing liq. or other method. Since the heat transferability of energy in the producing process is improved and the controllability of temp. distribution is also improved, the efficiency of production of the single crystal can be enhanced.</description><edition>6</edition><language>eng</language><subject>AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE ; APPARATUS THEREFOR ; ARTIFICIAL STONE ; BASIC ELECTRIC ELEMENTS ; CEMENTS ; CERAMICS ; CHEMISTRY ; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDINGMATERIALS ; CONCRETE ; CRYSTAL GROWTH ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; LIME, MAGNESIA ; METALLURGY ; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE ; REFINING BY ZONE-MELTING OF MATERIAL ; REFRACTORIES ; SEMICONDUCTOR DEVICES ; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE ; SINGLE-CRYSTAL-GROWTH ; SLAG ; TREATMENT OF NATURAL STONE ; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL</subject><creationdate>1997</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=19970506&DB=EPODOC&CC=JP&NR=H09118591A$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,776,881,25544,76293</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=19970506&DB=EPODOC&CC=JP&NR=H09118591A$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>YANAGISAWA ISAO</creatorcontrib><creatorcontrib>HAGIWARA KOJI</creatorcontrib><creatorcontrib>IWAI RYOJI</creatorcontrib><creatorcontrib>KIMURA NOBORU</creatorcontrib><title>PYROLYTIC BORON NITRIDE VESSEL AND ITS PRODUCTION</title><description>PROBLEM TO BE SOLVED: To obtain a pyrolytic BN vessel having high light transmissivity, capable of radiant heating and suitable for use in the production of a III-V compd. semiconductor single crystal by bringing a boron halide and NH3 into a pyrolysis reaction at a specified temp. under a specified pressure. SOLUTION: A gaseous born halide and gaseous ammonia are fed into a reaction furnace and brought into a pyrolysis reaction at 1,800-1,900 deg.C under 0.6-4.5Torr pressure and the resultant product is formed into the objective pyrolytic BN vessel having >=10% light transmissivity and an absorbance of <=1 at 3.700-6.500cm<-1> wave number in the case of 1mm thickness. A III-V compd. semiconductor single crystal such as GaAs single crystal is produced using the vessel as a crucible by the Czochralski method with a sealing liq. or other method. Since the heat transferability of energy in the producing process is improved and the controllability of temp. distribution is also improved, the efficiency of production of the single crystal can be enhanced.</description><subject>AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE</subject><subject>APPARATUS THEREFOR</subject><subject>ARTIFICIAL STONE</subject><subject>BASIC ELECTRIC ELEMENTS</subject><subject>CEMENTS</subject><subject>CERAMICS</subject><subject>CHEMISTRY</subject><subject>COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDINGMATERIALS</subject><subject>CONCRETE</subject><subject>CRYSTAL GROWTH</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>LIME, MAGNESIA</subject><subject>METALLURGY</subject><subject>PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE</subject><subject>REFINING BY ZONE-MELTING OF MATERIAL</subject><subject>REFRACTORIES</subject><subject>SEMICONDUCTOR DEVICES</subject><subject>SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE</subject><subject>SINGLE-CRYSTAL-GROWTH</subject><subject>SLAG</subject><subject>TREATMENT OF NATURAL STONE</subject><subject>UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>1997</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZDAMiAzy94kM8XRWcPIP8vdT8PMMCfJ0cVUIcw0OdvVRcPRzUfAMCVYICPJ3CXUO8fT342FgTUvMKU7lhdLcDIpuriHOHrqpBfnxqcUFicmpeakl8V4BHgaWhoYWppaGjsbEqAEAfUEnGA</recordid><startdate>19970506</startdate><enddate>19970506</enddate><creator>YANAGISAWA ISAO</creator><creator>HAGIWARA KOJI</creator><creator>IWAI RYOJI</creator><creator>KIMURA NOBORU</creator><scope>EVB</scope></search><sort><creationdate>19970506</creationdate><title>PYROLYTIC BORON NITRIDE VESSEL AND ITS PRODUCTION</title><author>YANAGISAWA ISAO ; HAGIWARA KOJI ; IWAI RYOJI ; KIMURA NOBORU</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_JPH09118591A3</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng</language><creationdate>1997</creationdate><topic>AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE</topic><topic>APPARATUS THEREFOR</topic><topic>ARTIFICIAL STONE</topic><topic>BASIC ELECTRIC ELEMENTS</topic><topic>CEMENTS</topic><topic>CERAMICS</topic><topic>CHEMISTRY</topic><topic>COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDINGMATERIALS</topic><topic>CONCRETE</topic><topic>CRYSTAL GROWTH</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>LIME, MAGNESIA</topic><topic>METALLURGY</topic><topic>PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE</topic><topic>REFINING BY ZONE-MELTING OF MATERIAL</topic><topic>REFRACTORIES</topic><topic>SEMICONDUCTOR DEVICES</topic><topic>SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE</topic><topic>SINGLE-CRYSTAL-GROWTH</topic><topic>SLAG</topic><topic>TREATMENT OF NATURAL STONE</topic><topic>UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL</topic><toplevel>online_resources</toplevel><creatorcontrib>YANAGISAWA ISAO</creatorcontrib><creatorcontrib>HAGIWARA KOJI</creatorcontrib><creatorcontrib>IWAI RYOJI</creatorcontrib><creatorcontrib>KIMURA NOBORU</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>YANAGISAWA ISAO</au><au>HAGIWARA KOJI</au><au>IWAI RYOJI</au><au>KIMURA NOBORU</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>PYROLYTIC BORON NITRIDE VESSEL AND ITS PRODUCTION</title><date>1997-05-06</date><risdate>1997</risdate><abstract>PROBLEM TO BE SOLVED: To obtain a pyrolytic BN vessel having high light transmissivity, capable of radiant heating and suitable for use in the production of a III-V compd. semiconductor single crystal by bringing a boron halide and NH3 into a pyrolysis reaction at a specified temp. under a specified pressure. SOLUTION: A gaseous born halide and gaseous ammonia are fed into a reaction furnace and brought into a pyrolysis reaction at 1,800-1,900 deg.C under 0.6-4.5Torr pressure and the resultant product is formed into the objective pyrolytic BN vessel having >=10% light transmissivity and an absorbance of <=1 at 3.700-6.500cm<-1> wave number in the case of 1mm thickness. A III-V compd. semiconductor single crystal such as GaAs single crystal is produced using the vessel as a crucible by the Czochralski method with a sealing liq. or other method. Since the heat transferability of energy in the producing process is improved and the controllability of temp. distribution is also improved, the efficiency of production of the single crystal can be enhanced.</abstract><edition>6</edition><oa>free_for_read</oa></addata></record> |
| fulltext | fulltext_linktorsrc |
| identifier | |
| ispartof | |
| issn | |
| language | eng |
| recordid | cdi_epo_espacenet_JPH09118591A |
| source | esp@cenet |
| subjects | AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE APPARATUS THEREFOR ARTIFICIAL STONE BASIC ELECTRIC ELEMENTS CEMENTS CERAMICS CHEMISTRY COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDINGMATERIALS CONCRETE CRYSTAL GROWTH ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY LIME, MAGNESIA METALLURGY PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE REFINING BY ZONE-MELTING OF MATERIAL REFRACTORIES SEMICONDUCTOR DEVICES SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE SINGLE-CRYSTAL-GROWTH SLAG TREATMENT OF NATURAL STONE UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL |
| title | PYROLYTIC BORON NITRIDE VESSEL AND ITS PRODUCTION |
| url | https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-27T16%3A15%3A58IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-epo_EVB&rft_val_fmt=info:ofi/fmt:kev:mtx:patent&rft.genre=patent&rft.au=YANAGISAWA%20ISAO&rft.date=1997-05-06&rft_id=info:doi/&rft_dat=%3Cepo_EVB%3EJPH09118591A%3C/epo_EVB%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true |