PYROLYTIC BORON NITRIDE VESSEL AND ITS PRODUCTION

PROBLEM TO BE SOLVED: To obtain a pyrolytic BN vessel having high light transmissivity, capable of radiant heating and suitable for use in the production of a III-V compd. semiconductor single crystal by bringing a boron halide and NH3 into a pyrolysis reaction at a specified temp. under a specified...

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Bibliographische Detailangaben
Hauptverfasser:	YANAGISAWA ISAO, HAGIWARA KOJI, IWAI RYOJI, KIMURA NOBORU
Format:	Patent
Sprache:	eng
Schlagworte:	AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE APPARATUS THEREFOR ARTIFICIAL STONE BASIC ELECTRIC ELEMENTS CEMENTS CERAMICS CHEMISTRY COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDINGMATERIALS CONCRETE CRYSTAL GROWTH ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY LIME, MAGNESIA METALLURGY PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE REFINING BY ZONE-MELTING OF MATERIAL REFRACTORIES SEMICONDUCTOR DEVICES SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE SINGLE-CRYSTAL-GROWTH SLAG TREATMENT OF NATURAL STONE UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL
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Beschreibung
Zusammenfassung:	PROBLEM TO BE SOLVED: To obtain a pyrolytic BN vessel having high light transmissivity, capable of radiant heating and suitable for use in the production of a III-V compd. semiconductor single crystal by bringing a boron halide and NH3 into a pyrolysis reaction at a specified temp. under a specified pressure. SOLUTION: A gaseous born halide and gaseous ammonia are fed into a reaction furnace and brought into a pyrolysis reaction at 1,800-1,900 deg.C under 0.6-4.5Torr pressure and the resultant product is formed into the objective pyrolytic BN vessel having >=10% light transmissivity and an absorbance of