NANOSTRUCTURE MEMORY ELEMENT
PROBLEM TO BE SOLVED: To provide a nano-structure memory element, which has a drain, a source and a channel and a region, in which electrons are stored, and in which the device has corresponding discrete threshold voltage, by composing the memory element of a nano-crystal formed onto a first insulat...
Gespeichert in:
| Hauptverfasser: | , , |
|---|---|
| Format: | Patent |
| Sprache: | eng |
| Schlagworte: | |
| Online-Zugang: | Volltext bestellen |
| Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
| container_end_page | |
|---|---|
| container_issue | |
| container_start_page | |
| container_title | |
| container_volume | |
| creator | SANDEITSUPU TEIWARI SEOREN PAARII SUMISU ZA SAADO UEI CHIEN |
| description | PROBLEM TO BE SOLVED: To provide a nano-structure memory element, which has a drain, a source and a channel and a region, in which electrons are stored, and in which the device has corresponding discrete threshold voltage, by composing the memory element of a nano-crystal formed onto a first insulator layer, electrically floated and electrostatically coupled with a semiconductor channel by Coulomb interruption and a gate electrode formed onto a second insulator layer. SOLUTION: In a nano-structure memory element. the threshold voltage of a memory-cell 10 is shifted by approximately 0.17V by each electron and hole in a nano-crystal 34 in consideration of the storage of a plurality of the electrons and the holes in the memory-cell 10. Consequently, when ten electrons or holes are stored, the shift of threshold voltage at 1.7V is generated. Accordingly, words in two bits or more of width can be stored in one memory-cell as the function of the number of electrons stored, thus largely increasing bit-pack density. |
| format | Patent |
| fullrecord | <record><control><sourceid>epo_EVB</sourceid><recordid>TN_cdi_epo_espacenet_JPH09116106A</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>JPH09116106A</sourcerecordid><originalsourceid>FETCH-epo_espacenet_JPH09116106A3</originalsourceid><addsrcrecordid>eNrjZJDxc_TzDw4JCnUOCQ1yVfB19fUPilRw9XH1dfUL4WFgTUvMKU7lhdLcDIpuriHOHrqpBfnxqcUFicmpeakl8V4BHgaWhoZmhgZmjsbEqAEAnTghVQ</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>NANOSTRUCTURE MEMORY ELEMENT</title><source>esp@cenet</source><creator>SANDEITSUPU TEIWARI ; SEOREN PAARII SUMISU ZA SAADO ; UEI CHIEN</creator><creatorcontrib>SANDEITSUPU TEIWARI ; SEOREN PAARII SUMISU ZA SAADO ; UEI CHIEN</creatorcontrib><description>PROBLEM TO BE SOLVED: To provide a nano-structure memory element, which has a drain, a source and a channel and a region, in which electrons are stored, and in which the device has corresponding discrete threshold voltage, by composing the memory element of a nano-crystal formed onto a first insulator layer, electrically floated and electrostatically coupled with a semiconductor channel by Coulomb interruption and a gate electrode formed onto a second insulator layer. SOLUTION: In a nano-structure memory element. the threshold voltage of a memory-cell 10 is shifted by approximately 0.17V by each electron and hole in a nano-crystal 34 in consideration of the storage of a plurality of the electrons and the holes in the memory-cell 10. Consequently, when ten electrons or holes are stored, the shift of threshold voltage at 1.7V is generated. Accordingly, words in two bits or more of width can be stored in one memory-cell as the function of the number of electrons stored, thus largely increasing bit-pack density.</description><edition>6</edition><language>eng</language><subject>BASIC ELECTRIC ELEMENTS ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; INFORMATION STORAGE ; MANUFACTURE OR TREATMENT THEREOF ; NANOSTRUCTURES FORMED BY MANIPULATION OF INDIVIDUAL ATOMS,MOLECULES, OR LIMITED COLLECTIONS OF ATOMS OR MOLECULES ASDISCRETE UNITS ; NANOTECHNOLOGY ; PERFORMING OPERATIONS ; PHYSICS ; SEMICONDUCTOR DEVICES ; STATIC STORES ; TRANSPORTING</subject><creationdate>1997</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=19970502&DB=EPODOC&CC=JP&NR=H09116106A$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,776,881,25542,76516</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=19970502&DB=EPODOC&CC=JP&NR=H09116106A$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>SANDEITSUPU TEIWARI</creatorcontrib><creatorcontrib>SEOREN PAARII SUMISU ZA SAADO</creatorcontrib><creatorcontrib>UEI CHIEN</creatorcontrib><title>NANOSTRUCTURE MEMORY ELEMENT</title><description>PROBLEM TO BE SOLVED: To provide a nano-structure memory element, which has a drain, a source and a channel and a region, in which electrons are stored, and in which the device has corresponding discrete threshold voltage, by composing the memory element of a nano-crystal formed onto a first insulator layer, electrically floated and electrostatically coupled with a semiconductor channel by Coulomb interruption and a gate electrode formed onto a second insulator layer. SOLUTION: In a nano-structure memory element. the threshold voltage of a memory-cell 10 is shifted by approximately 0.17V by each electron and hole in a nano-crystal 34 in consideration of the storage of a plurality of the electrons and the holes in the memory-cell 10. Consequently, when ten electrons or holes are stored, the shift of threshold voltage at 1.7V is generated. Accordingly, words in two bits or more of width can be stored in one memory-cell as the function of the number of electrons stored, thus largely increasing bit-pack density.</description><subject>BASIC ELECTRIC ELEMENTS</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>INFORMATION STORAGE</subject><subject>MANUFACTURE OR TREATMENT THEREOF</subject><subject>NANOSTRUCTURES FORMED BY MANIPULATION OF INDIVIDUAL ATOMS,MOLECULES, OR LIMITED COLLECTIONS OF ATOMS OR MOLECULES ASDISCRETE UNITS</subject><subject>NANOTECHNOLOGY</subject><subject>PERFORMING OPERATIONS</subject><subject>PHYSICS</subject><subject>SEMICONDUCTOR DEVICES</subject><subject>STATIC STORES</subject><subject>TRANSPORTING</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>1997</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZJDxc_TzDw4JCnUOCQ1yVfB19fUPilRw9XH1dfUL4WFgTUvMKU7lhdLcDIpuriHOHrqpBfnxqcUFicmpeakl8V4BHgaWhoZmhgZmjsbEqAEAnTghVQ</recordid><startdate>19970502</startdate><enddate>19970502</enddate><creator>SANDEITSUPU TEIWARI</creator><creator>SEOREN PAARII SUMISU ZA SAADO</creator><creator>UEI CHIEN</creator><scope>EVB</scope></search><sort><creationdate>19970502</creationdate><title>NANOSTRUCTURE MEMORY ELEMENT</title><author>SANDEITSUPU TEIWARI ; SEOREN PAARII SUMISU ZA SAADO ; UEI CHIEN</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_JPH09116106A3</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng</language><creationdate>1997</creationdate><topic>BASIC ELECTRIC ELEMENTS</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>INFORMATION STORAGE</topic><topic>MANUFACTURE OR TREATMENT THEREOF</topic><topic>NANOSTRUCTURES FORMED BY MANIPULATION OF INDIVIDUAL ATOMS,MOLECULES, OR LIMITED COLLECTIONS OF ATOMS OR MOLECULES ASDISCRETE UNITS</topic><topic>NANOTECHNOLOGY</topic><topic>PERFORMING OPERATIONS</topic><topic>PHYSICS</topic><topic>SEMICONDUCTOR DEVICES</topic><topic>STATIC STORES</topic><topic>TRANSPORTING</topic><toplevel>online_resources</toplevel><creatorcontrib>SANDEITSUPU TEIWARI</creatorcontrib><creatorcontrib>SEOREN PAARII SUMISU ZA SAADO</creatorcontrib><creatorcontrib>UEI CHIEN</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>SANDEITSUPU TEIWARI</au><au>SEOREN PAARII SUMISU ZA SAADO</au><au>UEI CHIEN</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>NANOSTRUCTURE MEMORY ELEMENT</title><date>1997-05-02</date><risdate>1997</risdate><abstract>PROBLEM TO BE SOLVED: To provide a nano-structure memory element, which has a drain, a source and a channel and a region, in which electrons are stored, and in which the device has corresponding discrete threshold voltage, by composing the memory element of a nano-crystal formed onto a first insulator layer, electrically floated and electrostatically coupled with a semiconductor channel by Coulomb interruption and a gate electrode formed onto a second insulator layer. SOLUTION: In a nano-structure memory element. the threshold voltage of a memory-cell 10 is shifted by approximately 0.17V by each electron and hole in a nano-crystal 34 in consideration of the storage of a plurality of the electrons and the holes in the memory-cell 10. Consequently, when ten electrons or holes are stored, the shift of threshold voltage at 1.7V is generated. Accordingly, words in two bits or more of width can be stored in one memory-cell as the function of the number of electrons stored, thus largely increasing bit-pack density.</abstract><edition>6</edition><oa>free_for_read</oa></addata></record> |
| fulltext | fulltext_linktorsrc |
| identifier | |
| ispartof | |
| issn | |
| language | eng |
| recordid | cdi_epo_espacenet_JPH09116106A |
| source | esp@cenet |
| subjects | BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY INFORMATION STORAGE MANUFACTURE OR TREATMENT THEREOF NANOSTRUCTURES FORMED BY MANIPULATION OF INDIVIDUAL ATOMS,MOLECULES, OR LIMITED COLLECTIONS OF ATOMS OR MOLECULES ASDISCRETE UNITS NANOTECHNOLOGY PERFORMING OPERATIONS PHYSICS SEMICONDUCTOR DEVICES STATIC STORES TRANSPORTING |
| title | NANOSTRUCTURE MEMORY ELEMENT |
| url | https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-02-15T05%3A58%3A24IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-epo_EVB&rft_val_fmt=info:ofi/fmt:kev:mtx:patent&rft.genre=patent&rft.au=SANDEITSUPU%20TEIWARI&rft.date=1997-05-02&rft_id=info:doi/&rft_dat=%3Cepo_EVB%3EJPH09116106A%3C/epo_EVB%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true |