NANOSTRUCTURE MEMORY ELEMENT

PROBLEM TO BE SOLVED: To provide a nano-structure memory element, which has a drain, a source and a channel and a region, in which electrons are stored, and in which the device has corresponding discrete threshold voltage, by composing the memory element of a nano-crystal formed onto a first insulator layer, electrically floated and electrostatically coupled with a semiconductor channel by Coulomb interruption and a gate electrode formed onto a second insulator layer. SOLUTION: In a nano-structure memory element. the threshold voltage of a memory-cell 10 is shifted by approximately 0.17V by each electron and hole in a nano-crystal 34 in consideration of the storage of a plurality of the electrons and the holes in the memory-cell 10. Consequently, when ten electrons or holes are stored, the shift of threshold voltage at 1.7V is generated. Accordingly, words in two bits or more of width can be stored in one memory-cell as the function of the number of electrons stored, thus largely increasing bit-pack density.