POWER SEMICONDUCTOR MODULE

PROBLEM TO BE SOLVED: To provide a power semiconductor module which has no cracking in a substrate. SOLUTION: On an insulating substrate 1 of a power semiconductor module, electrodes 2, 3, and 4 are installed parallelly in a pattern. Semiconductor chips 5 having pads 6 are mounted on one chip 2 and...

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Bibliographische Detailangaben
Hauptverfasser: KUSHIMA TADAO, KOIZUMI MASAHIRO, YAMADA KAZUJI, SHIMIZU HIDEO, KAJIWARA RYOICHI
Format: Patent
Sprache:eng
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Zusammenfassung:PROBLEM TO BE SOLVED: To provide a power semiconductor module which has no cracking in a substrate. SOLUTION: On an insulating substrate 1 of a power semiconductor module, electrodes 2, 3, and 4 are installed parallelly in a pattern. Semiconductor chips 5 having pads 6 are mounted on one chip 2 and the pads 6 are electrically connected to the other electrodes 3, 4 with wires 7. At that time, cut ends 20 of the wires 7 connected to the other electrodes 3, 4 come at the centers of the electrodes 3, 4.