COMPOSITE SEMICONDUCTOR SUBSTRATE

PROBLEM TO BE SOLVED: To provide a composite semiconductor substrate with a small warp in a wafer having a large diameter. SOLUTION: In a composite semiconductor substrate, one or more semiconductor single-crystal regions 11 and a supporting substrate 14 for supporting the single-crystal region 11 a...

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Bibliographische Detailangaben
Hauptverfasser: KAMIMURA TATSUO, FUJII KAZUHIRO
Format: Patent
Sprache:eng
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Beschreibung
Zusammenfassung:PROBLEM TO BE SOLVED: To provide a composite semiconductor substrate with a small warp in a wafer having a large diameter. SOLUTION: In a composite semiconductor substrate, one or more semiconductor single-crystal regions 11 and a supporting substrate 14 for supporting the single-crystal region 11 are joined with glass material 13. Then, the bottom and side faces of the semiconductor single-crystal region 11 are covered with an insulating film 12. In addition, a warp compensating layer 15 is provided at the rear face of the supporting substrate 14.