MANUFACTURE OF THIN FILM TRANSISTOR AND MANUFACTURE OF LIQUID CRYSTAL DISPLAY DEVICE

PURPOSE: To provide a method of manufacturing a liquid crystal display device wherein film formation velocity of amorphous silicon is improved without lowering field effect mobility. CONSTITUTION: Amorphous silicon of a semiconductor active layer 16 is formed to a film by a plasma CVD method wherein...

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Bibliographische Detailangaben
Hauptverfasser:	KASHIRO TAKESHI, IBARAKI NOBUKI, FUKUDA KAICHI, KAWAMURA SHINICHI
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS DEVICES OR ARRANGEMENTS, THE OPTICAL OPERATION OF WHICH ISMODIFIED BY CHANGING THE OPTICAL PROPERTIES OF THE MEDIUM OF THEDEVICES OR ARRANGEMENTS FOR THE CONTROL OF THE INTENSITY,COLOUR, PHASE, POLARISATION OR DIRECTION OF LIGHT, e.g.SWITCHING, GATING, MODULATING OR DEMODULATING ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY FREQUENCY-CHANGING NON-LINEAR OPTICS OPTICAL ANALOGUE/DIGITAL CONVERTERS OPTICAL LOGIC ELEMENTS OPTICS PHYSICS SEMICONDUCTOR DEVICES TECHNIQUES OR PROCEDURES FOR THE OPERATION THEREOF
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Beschreibung
Zusammenfassung:	PURPOSE: To provide a method of manufacturing a liquid crystal display device wherein film formation velocity of amorphous silicon is improved without lowering field effect mobility. CONSTITUTION: Amorphous silicon of a semiconductor active layer 16 is formed to a film by a plasma CVD method wherein silane gas is used as a source gas. A film is formed at film formation velocity of 50nm/minute more and at a substrate temperature of Ta=0.2×film formation rate [nm/minute]+295[ deg.C] or higher and Tb=0.5×film formation rate [nm/minute]+365[ deg.C] or lower. Thereby, fast speed is realized and field effect mobility can be prevented from lowering.