MANUFACTURE OF SEMICONDUCTOR DEVICE

PURPOSE: To improve adhesion, barrier performance, and flatness of an aperture part like a through hole which connects a wiring of a multilayered film structure with a conducting region of a lower layer. CONSTITUTION: After a through hole 4a for connecting wirings is formed, a sticking barrier metal film 5a and a Ti film 22 are sequentially deposited. After a mask member 23a is formed in only the inside of the through hole 4a, the exposed Ti film 22a is changed into a titanium oxide film 24. The mask member 23a is eliminated, and the inner part of the through hole 4 is filled in the self alignment manner by nonelectrolytic plating. Buried Au 25 is formed, and the surface is flattened. The titanium oxide film 24 which has become unnecessary and the Ti film left below the titanium oxide film 24 are eliminated by etching, the barrier metal film is exposed, and an Au film 7c as the next layer is formed by an electrolytic plating method while the exposed barrier metal film 5a is used as a power supply path, Thereby, generation of a cavity in the through hole can be prevented, and flatness of a wiring can be improved.