DRY ETCHING METHOD

PURPOSE: To dry-etch a film consisting essentially of group VIA elements in periodic table at a high rate and selectivity by using a gas contg. a compd. of nitrogen and oxygen and a compd. of oxygen and hydrogen. CONSTITUTION: A film consisting essentially of group VIA elements in periodic table, es...

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Bibliographische Detailangaben
Hauptverfasser:	KAJI SHIGEHIKO, NAKADA RENPEI, AOKI RIICHIRO
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL DIFFUSION TREATMENT OF METALLIC MATERIAL ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL METALLURGY MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLICMATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASSC23 AND AT LEAST ONEPROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25 NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:	PURPOSE: To dry-etch a film consisting essentially of group VIA elements in periodic table at a high rate and selectivity by using a gas contg. a compd. of nitrogen and oxygen and a compd. of oxygen and hydrogen. CONSTITUTION: A film consisting essentially of group VIA elements in periodic table, especially Cr, Mo and W, is formed on a substrate. The film is dry-etched by using a gas contg. a compd. of nitrogen and oxygen such as NO2 formed by converting a gaseous mixture of O2 and N2 to plasma and a compd. of oxygen and hydrogen such as H2 O. By this method, since the film consisting essentially of Cr, Mo and W is etched with high slectivity to the silicon oxide film, a highly reliable wiring is formed.