HIGH BREAKDOWN VOLTAGE MOS TRANSISTOR

PURPOSE:To provide an offset gate type high breakdown voltage MOS transistor wherein the element area is smaller than the conventional one, or the breakdown voltage is higher than the conventional one. CONSTITUTION:A drift region 14 is formed on the surface of a trench part 20 formed on a semiconduc...

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Bibliographische Detailangaben
1. Verfasser:	SHINDO MASAO
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:	PURPOSE:To provide an offset gate type high breakdown voltage MOS transistor wherein the element area is smaller than the conventional one, or the breakdown voltage is higher than the conventional one. CONSTITUTION:A drift region 14 is formed on the surface of a trench part 20 formed on a semiconductor substrate 11. Thereby an offset gate high breakdown voltage MOS transistor is obtained wherein the element area is small in the case of the same breakdown voltage, or the breakdown voltage is high in the case of the same area, as compared with the conventional transistor in which a drift region is formed on the main surface of the semiconductor substrate 11.