PRODUCTION OF CRYSTAL OF MIXED CRYSTAL SEMICONDUCTOR

PURPOSE: To produce a mixed crystal material having controlled mixed crystal distribution in the direction of growing axis and small microscopic segregation and to form a single crystal from the produced crystal taking advantage of the transfer of a melting zone. CONSTITUTION: A mixed crystal semico...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	NISHIZAWA JUNICHI, KAWASHIMA MASATO, SAWAFUJI YUTAKA
Format:	Patent
Sprache:	eng
Schlagworte:	AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE APPARATUS THEREFOR CHEMISTRY CRYSTAL GROWTH METALLURGY PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE REFINING BY ZONE-MELTING OF MATERIAL SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE SINGLE-CRYSTAL-GROWTH UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL
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